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sces507 ? november 2003 1 post office box 655303 ? dallas, texas 75265 available in the texas instruments nanostar ? and nanofree ? packages operates at 0.8 v to 2.7 v sub 1-v operable max t pd of 0.5 ns at 1.8 v low power consumption, 10 a at 2.7 v high on-off output voltage ratio high degree of linearity latch-up performance exceeds 100 ma per jesd 78, class ii esd performance tested per jesd 22 ? 2000-v human-body model (a114-b, class ii) ? 200-v machine model (a115-a) ? 1000-v charged-device model (c101) description/ordering information this dual analog switch is operational at 0.8-v to 2.7-v v cc , but is designed specifically for 1.1-v to 2.7-v v cc operation. the sn74auc2g66 can handle both analog and digital signals. it permits signals with amplitudes of up to 2.7-v (peak) to be transmitted in either direction. nanostar ? and nanofree ? package technology is a major breakthrough in ic packaging concepts, using the die as the package. applications include signal gating, chopping, modulation or demodulation (modem), and signal multiplexing for analog-to-digital and digital-to-analog conversion systems. ordering information t a package ? orderable part number top-side marking ? nanostar ? ? wcsp (dsbga) 0.23-mm large bump ? yep tape and reel sn74auc2g66yepr _ _ _u6_ ?40 c to 85 c nanofree ? ? wcsp (dsbga) 0.23-mm large bump ? yzp (pb-free) tape and reel SN74AUC2G66YZPR _ _ _u6_ ssop ? dct tape and reel sn74auc2g66dctr u66_ _ _ vssop ? dcu tape and reel sn74auc2g66dcur u66_ ? package drawings, standard packing quantities, thermal data, symbolization, and pcb design guidelines are available at www.ti.com/sc/package. ? dct: the actual top-side marking has three additional characters that designate the year, month, and assembly/test site. dcu: the actual top-side marking has one additional character that designates the assembly/test site. yep/yzp: the actual top-side marking has three preceding characters to denote year, month, and sequence code, and one following character to designate the assembly/test site. pin 1 identifier indicates solder-bump composition (1 = snpb, ? = pb-free). dct or dcu package (top view) 1 2 3 4 8 7 6 5 1a 1b 2c gnd v cc 1c 2b 2a 4 3 2 1 5 6 7 8 gnd 2c 1b 1a 2a 2b 1c v cc yep or yzp package (bottom view) copyright ? 2003, texas instruments incorporated please be aware that an important notice concerning avail ability, standard warranty, and use in critical applications of texas instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. nanostar and nanofree are trademarks of texas instruments.
sces507 ? november 2003 2 post office box 655303 ? dallas, texas 75265 function table control input (c) switch l off h on logic diagram (positive logic) b c a 1 4 2 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) ? supply voltage range, v cc (see note 1) ?0.5 v to 3.6 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input voltage range, v i (see notes 1 and 2) ?0.5 v to 3.6 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . switch i/o voltage range, v i/o (see notes 1 and 2) ?0.5 v to v cc + 0.5 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . control input clamp current, i ik (v i < 0) ?50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i/o port diode current, i iok (v i/o < 0 or v i/o > v cc ) 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . on-state switch current, i t (v i/o = 0 to v cc ) 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous current through v cc or gnd 100 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . package thermal impedance, ja (see note 3): dct package 220 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dcu package 227 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . yep/yzp package 102 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ?65 c to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ? stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, a nd functional operation of the device at these or any other conditions beyond those indicated under ?recommended operating conditi ons? is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. notes: 1. all voltages are with respect to ground unless otherwise specified. 2. the input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed. 3. the package thermal impedance is calculated in accordance with jesd 51-7.
sces507 ? november 2003 3 post office box 655303 ? dallas, texas 75265 recommended operating conditions (see note 4) min max unit v cc supply voltage 0.8 2.7 v v cc = 0.8 v v cc v ih high-level input voltage v cc = 1.1 v to 1.95 v 0.65 v cc v v ih high-level input voltage v cc = 2.3 v to 2.7 v 1.7 v v cc = 0.8 v 0 v il low-level input voltage v cc = 1.1 v to 1.95 v 0.35 v cc v v il low-level input voltage v cc = 2.3 v to 2.7 v 0.7 v v i/o i/o port voltage 0 v cc v v i control input voltage 0 3.6 v v cc = 0.8 v to 1.65 v ? 20 ? t/ ? v input transition rise or fall rate v cc = 1.65 v to 2.3 v ? 20 ns/v ? t/ ? v input transition rise or fall rate v cc = 2.3 v to 2.7 v ? 20 ns/v t a operating free-air temperature ?40 85 c ? the data was taken at c l = 15 pf, r l = 2 k ? (see figure 1). ? the data was taken at c l = 30 pf, r l = 500 ? (see figure 1). note 4: all unused inputs of the device must be held at v cc or gnd to ensure proper device operation. refer to the ti application report, implications of slow or floating cmos inputs , literature number scba004. electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) parameter test conditions v cc min typ max unit v i = v cc or gnd, i s = 4 ma 1.1 v 17 40 r on on-state switch resistance v i = v cc or gnd, v c = v ih (see figures 1 and 2) i s = 4 ma 1.65 v 7 20 ? r on on-state switch resistance v c = v ih (see figures 1 and 2) i s = 8 ma 2.3 v 4 15 ? ? r on(p) peak on resistance v c = v ih (see figures 1 and 2) i s = 8 ma 2.3 v 15 20 ? ? r on difference of on-state resistance between switches v i = v cc to gnd, v c = v ih (see figures 1 and 2) i s = 4 ma 1.65 v 1 ? ? r on between switches v c = v ih (see figures 1 and 2) i s = 8 ma 2.3 v 1 ? 1 a i s(off) off-state switch leakage current icc o v i = gnd and v o = v cc , v c = v il (see figure 3) 2.7 v 0.1 ? a i s(on) on-state switch leakage current v i = v cc or gnd, v c = v ih , v o = open 2.7 v 1 a i s(on) on-state switch leakage current v i = v cc or gnd, v c = v ih , v o = open (see figure 4) 2.7 v 0.1 ? a i i control input current v i = v cc or gnd 0 to 2.7 v 5 a i cc supply current v i = v cc or gnd, i o = 0 0.8 v to 2.7 v 10 a c ic control input capacitance 2.5 v 2.5 pf c io(off) switch input/output capacitance 2.5 v 3 pf c io(on) switch input/output capacitance 2.5 v 7 pf t a = 25 c
sces507 ? november 2003 4 post office box 655303 ? dallas, texas 75265 switching characteristics over recommended operating free-air temperature range, c l = 15 pf (unless otherwise noted) (see figure 5) parameter from (input) to (output) v cc = 0.8 v v cc = 1.2 v 0.1 v v cc = 1.5 v 0.1 v v cc = 1.8 v 0.15 v v cc = 2.5 v 0.2 v unit parameter (input) (output) typ min max min max min typ max min max unit t pd ? a or b b or a 1 0.6 0.5 0.5 0.4 ns t en c a or b 5 0.5 3 0.5 2.1 0.5 0.9 1.6 0.5 1.4 ns t dis c a or b 5.3 0.5 4 0.5 3 0.5 2.6 3.3 0.5 2.7 ns ? the propagation delay is the calculated rc time constant of the typical on-state resistance of the switch and the specified loa d capacitance when driven by an ideal voltage source (zero output impedance). switching characteristics over recommended operating free-air temperature range, c l = 30 pf (unless otherwise noted) (see figure 5) parameter from (input) to (output) v cc = 1.8 v 0.15 v v cc = 2.5 v 0.2 v unit parameter (input) (output) min typ max min max unit t pd ? a or b b or a 0.7 0.7 ns t en c a or b 0.5 1.6 2.7 0.5 2.3 ns t dis c a or b 0.5 2.7 3.4 0.5 2 ns ? the propagation delay is the calculated rc time constant of the typical on-state resistance of the switch and the specified loa d capacitance when driven by an ideal voltage source (zero output impedance). analog switch characteristics, t a = 25 c parameter from (input) to (output) test conditions v cc typ unit 0.8 v 101 c l = 50 pf, r l = 600 ? , 1.1 v 150 c l = 50 pf, r l = 600 ? , f in = sine wave 1.4 v 175 f in = sine wave (see figure 6) 1.65 v 250 frequency response ? a or b b or a 2.3 v 400 mhz frequency response ? (switch on) a or b b or a 0.8 v 450 mhz (switch on) c l = 5 pf, r l = 50 ? , 1.1 v > 500 c l = 5 pf, r l = 50 ? , f in = sine wave 1.4 v > 500 f in = sine wave (see figure 6) 1.65 v > 500 2.3 v > 500 0.8 v ?60 c l = 50 pf, r l = 600 ? , 1.1 v ?60 c l = 50 pf, r l = 600 ? , f in = 1 mhz (sine wave) 1.4 v ?60 f in = 1 mhz (sine wave) (see figure 7) 1.65 v ?60 crosstalk a or b b or a 2.3 v ?60 db crosstalk (between switches) a or b b or a 0.8 v ?65 db (between switches) c l = 5 pf, r l = 50 ? , 1.1 v ?65 c l = 5 pf, r l = 50 ? , f in = 1 mhz (sine wave) 1.4 v ?65 f in = 1 mhz (sine wave) (see figure 7) 1.65 v ?65 2.3 v ?65 ? adjust f in voltage to obtain 0 dbm at output. increase f in frequency until db meter reads ?3 db. adjust f in voltage to obtain 0 dbm at input.
sces507 ? november 2003 5 post office box 655303 ? dallas, texas 75265 analog switch characteristics, t a = 25 c (continued) parameter from (input) to (output) test conditions v cc typ unit 0.8 v 9 crosstalk c l = 50 pf, r l = 600 ? , 1.1 v 14 crosstalk (control input to signal output) c a or b c l = 50 pf, r l = 600 ? , f in = 1 mhz (square wave) 1.4 v 15 mv (control input to signal output) c a or b f in = 1 mhz (square wave) (see figure 8) 1.65 v 16 mv 2.3 v 20 0.8 v ?50 c l = 50 pf, r l = 600 ? , 1.1 v ?50 c l = 50 pf, r l = 600 ? , f in = 1 mhz (sine wave) 1.4 v ?50 f in = 1 mhz (sine wave) (see figure 9) 1.65 v ?50 feed-through attenuation ? a or b b or a 2.3 v ?50 db feed-through attenuation ? (switch off) a or b b or a 0.8 v ?60 db (switch off) c l = 5 pf, r l = 50 ? , 1.1 v ?60 c l = 5 pf, r l = 50 ? , f in = 1 mhz (sine wave) 1.4 v ?60 f in = 1 mhz (sine wave) (see figure 9) 1.65 v ?60 2.3 v ?60 0.8 v 7 a or b b or a c l = 50 pf, r l = 10 k ? , f = 1 khz (sine wave) 1.1 v 0.25 6 a or b b or a c l = 50 pf, r l = 10 k , f in = 1 khz (sine wave) (see figure 10) 1.4 v 0.04 (see figure 10) 1.65 v 0.03 sine-wave distortion 2.3 v 0.01 % sine-wave distortion 0.8 v 3.7 % c l = 50 pf, r l = 10 k ? , 1.1 v 0.4 a or b b or a c l = 50 pf, r l = 10 k ? , f in = 10 khz (sine wave) (see figure 10) 1.4 v 0.04 a or b b or a f in = 10 khz (sine wave) (see figure 10) 1.65 v 0.02 2.3 v 0.02 ? adjust f in voltage to obtain 0 dbm at input. operating characteristics, t a = 25 c parameter test v cc = 0.8 v v cc = 1.2 v v cc = 1.5 v v cc = 1.8 v v cc = 2.5 v unit parameter test conditions typ typ typ typ typ unit c pd power dissipation capacitance f = 10 mhz 2.5 2.5 2.5 2.5 2.5 pf
sces507 ? november 2003 6 post office box 655303 ? dallas, texas 75265 parameter measurement information v cc v i = v cc or gnd v o r on v i v o i s v i ? v o gnd (on) v b or a c a or b v cc v ih v c i s figure 1. on-state resistance test circuit 0 20 40 60 80 100 120 0123 v cc = 1.65 v v cc = 1.1 v v cc = 2.3 v figure 2. typical r on as a function of voltage (v i ) for v i = 0 to v cc
sces507 ? november 2003 7 post office box 655303 ? dallas, texas 75265 parameter measurement information condition 1: v i = gnd, v o = v cc condition 2: v i = v cc , v o = gnd v cc v i v o gnd (off) b or a c a or b v cc v il v c a figure 3. off-state switch leakage-current test circuit v cc v o gnd (on) b or a c a or b v cc v ih v c a v i = v cc or gnd v o = open figure 4. on-state leakage-current test circuit
sces507 ? november 2003 8 post office box 655303 ? dallas, texas 75265 parameter measurement information v m t h t su from output under test c l (see note a) load circuit s1 v load open gnd r l r l data input timing input v i 0 v v i 0 v 0 v t w input voltage waveforms setup and hold times voltage waveforms propagation delay times inverting and noninverting outputs voltage waveforms pulse duration t plh t phl t phl t plh v oh v oh v ol v ol v i 0 v input output waveform 1 s1 at v load (see note b) output waveform 2 s1 at gnd (see note b) v ol v oh t pzl t pzh t plz t phz v load / 2 0 v v ol + v ? v oh ? v ? 0 v v i voltage waveforms enable and disable times low- and high-level enabling output output t plh /t phl t plz /t pzl t phz /t pzh open v load gnd test s1 notes: a. c l includes probe and jig capacitance. b. waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control. waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control. c. all input pulses are supplied by generators having the following characteristics: prr 10 mhz, z o = 50 ? , slew rate 1 v/ns . d. the outputs are measured one at a time with one transition per measurement. e. t plz and t phz are the same as t dis . f. t pzl and t pzh are the same as t en . g. t plh and t phl are the same as t pd . h. all parameters and waveforms are not applicable to all devices. output control v m v m v m v m v m v m v m v m v m v m v m v m v i v m v m 0.8 v 1.2 v 0.1 v 1.5 v 0.1 v 1.8 v 0.15 v 2.5 v 0.2 v 1.8 v 0.15 v 2.5 v 0.2 v 2 k ? 2 k ? 2 k ? 2 k ? 2 k ? 1 k ? 500 ? v cc r l 2 v cc 2 v cc 2 v cc 2 v cc 2 v cc 2 v cc 2 v cc v load c l 15 pf 15 pf 15 pf 15 pf 15 pf 30 pf 30 pf 0.1 v 0.1 v 0.1 v 0.15 v 0.15 v 0.15 v 0.15 v v ? v cc v cc v cc v cc v cc v cc v cc v i v cc /2 v cc /2 v cc /2 v cc /2 v cc /2 v cc /2 v cc /2 v m t r /t f 2 ns 2 ns 2 ns 2 ns 2 ns 2 ns 2 ns inputs figure 5. load circuit and voltage waveforms
sces507 ? november 2003 9 post office box 655303 ? dallas, texas 75265 parameter measurement information v cc v o gnd b or a c a or b v cc v c v ih r l c l 50 ? 0.1 f (on) v cc /2 r l /c l : 600 ? / 50 pf r l /c l : 50 ? / 5 pf f in figure 6. frequency response (switch on) v cc v o1 1b or 1a c 1a or 1b v cc v c v ih c l 50 pf 50 ? 0.1 f (on) v cc /2 20log 10 (v o2 /v i1 ) or 20log 10 (v o1 /v i2 ) f in r l 600 ? r in 600 ? v o2 gnd 2b or 2a c 2a or 2b v c v il r in 600 ? (off) v cc /2 r l 600 ? c l 50 pf figure 7. crosstalk (between switches)
sces507 ? november 2003 10 post office box 655303 ? dallas, texas 75265 parameter measurement information v cc v o gnd b or a c a or b v cc v c c l 50 pf 50 ? v cc /2 v cc /2 r in 600 ? r l 600 ? figure 8. crosstalk (control input ? switch output) v cc v o gnd b or a c a or b v cc v c v il r l c l 50 ? 0.1 f (off) v cc /2 r l /c l : 600 ? / 50 pf r l /c l : 50 ? / 5 pf f in r l v cc /2 figure 9. feed through, switch off
sces507 ? november 2003 11 post office box 655303 ? dallas, texas 75265 parameter measurement information v cc v o gnd b or a c a or b v cc v c v ih r l 10 k ? c l 50 pf 600 ? 10 f (on) v cc /2 v cc = 0.8 v, v i = 0.7 v p-p v cc = 1.1 v, v i = 1 v p-p v cc = 1.4 v, v i = 1.2 v p-p v cc = 1.65 v, v i = 1.4 v p-p v cc = 2.3 v, v i = 2 v p-p f in 10 f figure 10. sine-wave distortion
mechanical data mpds049b ? may 1999 ? revised october 2002 post office box 655303 ? dallas, texas 75265 dct (r-pdso-g8) plastic small-outline package ????? ????? ????? ????? 0,60 0,20 0,25 0 ? 8 0,15 nom gage plane 4188781/c 09/02 4,25 5 0,30 0,15 2,90 3,75 2,70 8 4 3,15 2,75 1 0,10 0,00 1,30 max seating plane 0,10 m 0,13 0,65 pin 1 index area notes: a. all linear dimensions are in millimeters. b. this drawing is subject to change without notice. c. body dimensions do not include mold flash or protrusion d. falls within jedec mo-187 variation da.

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